BSS209PW L6327

BSS 209PW OptiMOS -P Small-Signal-Transistor ® Product Summary Features • P-Channel • Enhancement mode V DS -20 V R DS(on),max 550 mΩ ID -0.63 A • Super Logic level ( 2.5 V rated) • 150°C operating temperature PG-SOT-323 • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry Value Unit T C=25 °C -0.63 A T C=70 °C -0.5 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current I D,pulse T C=25 °C -2.5 Avalanche energy, single pulse E AS I D= -0.63 A, R GS=25 Ω 4.0 mJ Reverse diode dv /dt dv /dt I D= -0.63 A, V DS=-16 V, di /dt =-200 A/µs, T j,max=150 °C -6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class T A=25 °C JESD22-C101 (HBM) V 0.30 W -55 ... 150 °C 0 (max 250V) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev. 1.32 ±12 page 1 2011-07-13 BSS 209PW Parameter Values Symbol Conditions Unit min. typ. max. - - 120 - - 420 - - 350 Thermal characteristics Thermal resistance, junction - soldering point R thJS SMD version, device on PCB: R thJA minimal footprint 6 cm2 cooling area1) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA -20 - - Gate threshold voltage V GS(th) V DS=V GS, I D=3.5 µA -0.6 -0.9 -1.2 Zero gate voltage drain current I DSS V DS=-20 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-20 V, V GS=0 V, T j=150 °C - -10 -100 Gate-source leakage current I GSS V GS=12 V, V DS=0 V - -10 -100 Drain-source on-state resistance R DS(on) V GS=2.5 V, I D=0.46 A - 581 900 V GS=4.5 V, I D=0.63 A - 379 550 |V DS|>2|I D|R DS(on)max, I D=0.46 A 0.87 1.74 - Transconductance g fs V µA nA S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t≤10 sec. Rev. 1.32 page 2 2011-07-13 BSS 209PW Parameter Values Symbol Conditions Unit min. typ. max. - 87 115 - 35 46.7 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 30 45 Turn-on delay time t d(on) - 2.6 4.0 Rise time tr - 7 11 Turn-off delay time t d(off) - 6 9 Fall time tf - 4.6 6.9 Gate to source charge Q gs - -0.18 -0.24 Gate to drain charge Q gd - -0.46 -0.7 Gate charge total Qg - -1.0 -1.3 Gate plateau voltage V plateau - -2.0 - V - - -0.7 A - - -4.0 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-10 V, V GS=4.5 V, I D=0.58 A, R G=6 Ω pF ns Gate Charge Characteristics 3) V DD=10 V, I D=0.58 A, V GS=0 to 4.5 V nC Reverse Diode Diode continous forward current IS Diode direct current, pulsed I SM Diode forward voltage V SD V GS=0 V, I F=-0.58 A, T j=25 °C - -0.92 -0.88 V Reverse recovery time t rr V R=10 V, I F=|I S|, di F/dt =100 A/µs - 9 11.2 ns Reverse recovery charge Q rr - 1.27 1.59 nC Rev. 1.32 T C=25 °C page 3 2011-07-13 BSS 209PW 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥4.5 V 1.2 0.6 1 -I D [A] P tot [W] 0.8 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 101 160 T A [°C] 1000 10 1 µs 0.5 10 µs limited by on-state resistance 1 0.1 1 ms -I D [A] 0.2 100 100 µs Z thJS [K/W] 100 10 ms 0.05 0.02 0.01 10-1 0.1 10-2 0.01 10 1 0.1 10 1 -1 10 10 0 10 100 1 10 2 -V DS [V] Rev. 1.32 single pulse DC page 4 10-5 10-4 10-3 10-2 10-1 100 101 t p [s] 2011-07-13 BSS 209PW 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 1000 4 -4.5 V -2 V -10 V -3.5 V -2.3 V 900 -3.2 V -3 V -2.7 V -3.2 V 800 -3 V 3 R DS(on) [mΩ] -I D [A] 700 -2.7 V 2 -2.5 V 600 -3.5 V 500 -4.5 V 400 -2.3 V -10 V 1 300 200 0 100 0 2 3 5 0 6 0.5 1 -V DS [V] 1.5 2 2.5 3 3.5 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 3 g fs [S] -I D [A] 2 150 °C 2 1 1 25 °C 0 0 0 1 2 3 Rev. 1.32 0 1 2 3 4 -I D [A] -V GS [V] page 5 2011-07-13 BSS 209PW 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.58 A; V GS=-4.5 V V GS(th)=f(T j); V GS=V DS; I D=-3.5 μA 1.6 800 750 1.4 700 1.2 650 max. 98 % 1 -V GS(th) [V] R DS(on) [mΩ] 600 550 500 typ. 0.8 min. 0.6 450 400 0.4 350 typ. 0.2 300 250 0 -60 -20 20 60 100 -60 140 -20 20 60 T j [°C] 100 140 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 10 1000 102 I F [A] C [pF] 1 100 Ciss Coss 150 °C, typ 0.1 Crss 25 °C, typ 150 °C, 98% 25 °C, 98% 0.01 10 0 5 10 15 20 Rev. 1.32 0 0.5 1 1.5 2 2.5 -V SD [V] -V DS [V] page 6 2011-07-13 BSS 209PW 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-0.58 A pulsed parameter: T j(start) parameter: V DD 10 0 10 9 8 7 25 °C 6 -V GS [V] -I AV [A] 100 °C 125 °C -4V -10V -16 V 5 4 3 2 1 0 10 0 -1 100 101 t AV [µs] 102 10 3 0.5 1 1.5 2 2.5 -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 μA 23 -V BR(DSS) [V] 22 21 20 19 18 -60 -20 20 60 100 140 T j [°C] Rev. 1.32 page 7 2011-07-13 BSS 209PW Package Outline: Footprint: Rev. 1.32 Packaging: page 8 2011-07-13 BSS 209PW Published by Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2011-07-13